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1/13 2012.02 - rev.b r6015anx nch 600v 15a power mosfet bulk - type packing mj v 15 tape width (mm) - reel size (mm) value v 500 15 30 a avalanche energy, single pulse avalanche energy, repetitive avalanche current 7.5 - e ar *4 mj a 3.5 r6015anx unit 600 e as *3 i d,pulse *2 i d *1 7.0 v/ns 150 c w c 15 ? 55 to + 150 50 reverse diode dv/dt i ar *3 range of storage temperature t stg power dissipation (t c = 25 c) dv/dt *5 junction temperature p d t j a a symbol basic ordering unit (pcs) pulsed drain current switching power supply v dss i d *1 v gss 60 marking taping code 1) low on-resistance. 6) pb-free lead plating ; rohs compliant gate - source voltage parameter t c = 25 c drain - source voltage ? absolute maximum ratings (t a = 25 c) t c = 100 c ? features 50w continuous drain current 3) gate-source voltage (v gss ) guaranteed to be 30v. ? application 4) drive circuits can be simple. 2) fast switching speed. ? outline ? inner circuit ? packaging specifications to-220fm 600v 0.3 ? 15a 5) parallel use is easy. v dss r ds(on) (max.) i d p d (1) gate (2) drain (3) source *1 body diode (1) (2) (3) dat asheet www.rohm.com ? 2012 rohm co., ltd. all rights reserved.
r6015anx 2/13 2012.02 - rev.b ? gate input resistance r g f = 1mhz, open drain - 10.5 - static drain - source on - state resistance r ds(on) *6 ? t j = 25 c - 0.23 0.3 t j = 125c - 0.46 - v gs = 10v, i d = 7.5a gate threshold voltage v gs (th) v ds = 10v, i d = 1ma 2.5 gate - source leakage current v gs = 30v, v ds = 0v - 700 t j = 25 c drain - source avalanche breakdown voltage - 600 - i dss i gss - v (br)ds symbol conditions values - - 70 c - - 100 - - 4.5 0.1 - v symbol - unit c/w - 2.5 - - na v/ns t j = 125 c t j = 125c 50 v r thjc 265 a 100 1000 parameter zero gate voltage drain current v (br)dss v gs = 0v, i d = 15a v gs = 0v, i d = 1ma values parameter drain - source breakdown voltage v ds = 600v, v gs = 0v conditions symbol ? absolute maximum ratings ? thermal resistance thermal resistance, junction - case parameter max. v thermal resistance, junction - ambient soldering temperature, wavesoldering for 10s ? electrical characteristics (t a = 25 c) drain - source voltage slope dv/dt v ds = 480v, i d = 15a - typ. values typ. c/w unit max. unit t sold r thja min. min. www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
r6015anx 3/13 2012.02 - rev.b *1 limited only by maximum temperature allowed. *2 pw 10 s, duty cycle 1% *3 l ? 500 h, v dd = 50v, r g = 25 ? , starting t j = 25 c *4 l ? 500 h, v dd = 50v, r g = 25 ? , starting t j = 25 c, f = 10khz *5 reference measurement circuits fig.5-1. *6 pulsed max. reverse transfer capacitance z electrical characteristics (t a = 25 c) parameter symbol conditions values unit min. typ. 11 transconductance input capacitance 4.5 output capacitance c oss v ds = 25v - - s c iss v gs = 0v - 1700 - g fs *6 v ds = 10v, i d = 7.5a pf - pf - 79 - - 80 - c rss f = 1mhz - 80 - 1120 turn - on delay time t d(on) *6 v dd ? 300v, v gs = 10v - effective output capacitance, energy related effective output capacitance, time related c o(er) c o(tr) v gs = 0v v ds = 0v to 480v ns 150 300 60 120 - 50 - r g = 10 ? - r l = 40 ? - - z gate charge characteristics (t a = 25 c) rise time t r *6 i d = 7.5a symbol values 50 typ. turn - off delay time t d(off) *6 fall time t f *6 total gate charge gate - source charge q gs *6 i d = 15a q g *6 v dd ? 300v v gs = 10v unit - 8 - min. nc 50 - conditions 20 - - max. parameter 6.0 - v gate plateau voltage v (plateau) v dd ? 300v, i d = 15a - - gate - drain charge q gd *6 www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
r6015anx 4/13 2012.02 - rev.b - a a a 1.5 v ns 60 15 - r th1 peak rate of fall of reverse recovery current di rr /dt symbol value ? typical transient thermal characteristics 700 symbol value unit unit - r th3 2.14 c th3 0.507 a/ s - t j = 25 c 0.00318 k/w ws/k r th2 0.662 c th2 0.0429 0.117 c th1 - q rr *6 i rrm *6 i s *1 i sm *2 - ? body diode electrical characteristics (source-drain) (t a = 25 c) - 6.3 - c v sd *6 v gs = 0v, i s = 15a typ. forward voltage reverse recovery time t c = 25 c i s = 15a di/dt = 100a/ s 482 - - - unit min. max. peak reverse recovery current parameter symbol conditions values reverse recovery charge t rr *6 - inverse diode continuous, forward current inverse diode direct current, pulsed - 26 - www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
r6015anx 5/13 2012.02 - rev.b ? electrical characteristic curves 0 20 40 60 80 100 120 0 50 100 150 200 0.0001 0.001 0.01 0.1 1 10 100 1000 0.0001 0.01 1 100 t a = 25oc single pulse r th(ch- a)(t) = (t) r th(ch- a) r th(ch- a) = 70oc/w top d = 1 d = 0.5 d = 0.1 d = 0.05 d = 0.01 d = single fig.1 power dissipation derating curve power dissipation : p d /p d max. [%] junction temperature : tj [ c] fig.2 maximum safe operating area drain current : i d [a] drain - source voltage : v ds [v] fig.3 normalized transient thermal resistance vs. pulse width normalized transient thermal resistance : r (t) pulse width : pw [s] 0.01 0.1 1 10 100 0.1 1 10 100 1000 p w = 10ms p w = 100us p w = 1ms operation in this area is limited by r ds(on) t a = 25o c single pulse www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
r6015anx 6/13 2012.02 - rev.b ? electrical characteristic curves 0 1 2 3 4 5 6 7 8 9 10 0.01 0.1 1 10 100 t a = 25oc v dd = 50v , r g = 25 v gf = 10v , v gr = 0v 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 fig.4 avalanche current vs inductive load avalanche current : i ar [a] coil inductance : l [mh] fig.5 avalanche power losses avalanche power losses : p ar [w] frequency : f [hz] fig.6 avalanche energy derating curve vs junction temperature avalanche energy : e as / e as max. [%] junction temperature : t j [oc] 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 1.0e+04 1.0e+05 1.0e+06 t a = 25oc www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
r6015anx 7/13 2012.02 - rev.b ? electrical characteristic curves fig.7 typical output characteristics(i) drain current : i d [a] drain - source voltage : v ds [v] fig.8 typical output characteristics(ii) drain current : i d [a] drain - source voltage : v ds [v] fig.9 t j = 150 c typical output characteristics(i) drain current : i d [a] drain - source voltage : v ds [v] fig.10 t j = 150 c typical output characteristics(ii) drain current : i d [a] drain - source voltage : v ds [v] 0 3 6 9 12 15 0 5 10 15 20 5.0v v gs = 4.5v 6.0v 7.0v 8.0v 6.5v 10v t a = 25oc pulsed 5.5v 0 5 10 15 0 1 2 3 4 5 v gs = 4.5v 5.0v 6.0v 5.5v 6.5v 7.0v 8.0v 10v t a = 25oc pulsed 0 3 6 9 12 15 0 5 10 15 20 t a = 150oc pulsed 5.5v v gs = 4.5v 10v 6.0v 0 3 6 9 12 15 0 1 2 3 4 5 t a = 150oc pulsed v gs = 4.5v 10v 5.0v 6.0v www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
r6015anx 8/13 2012.02 - rev.b ? electrical characteristic curves 500 550 600 650 700 750 800 850 900 -50 0 50 100 150 0 1 2 3 4 5 6 -50 0 50 100 150 v ds = 10v i d = 1ma 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 v ds = 10v pulsed t a = - 25oc t a = 25oc t a = 75oc t a = 125oc fig.11 breakdown voltage vs. junction temperature drain - source breakdown voltage : v (br)dss [v] junction temperature : t j [ c ] fig.12 typical transfer characteristics drain current : i d [a] gate - source voltage : v gs [v] fig.13 gate threshold voltage vs. junction temperature gate threshold voltage : v gs(th) [v] junction temperature : t j [ c ] fig.14 transconductance vs. drain current transconductance : g fs [s] drain current : i d [a] 0.01 0.1 1 10 100 0 1 2 3 4 5 6 7 v ds = 10v pulsed t a = 125oc t a = 75oc t a = 25oc t a = ? 25oc www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
r6015anx 9/13 2012.02 - rev.b ? electrical characteristic curves 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 i d = 7.5a i d = 15a t a = 25oc pulsed 0 0.1 0.2 0.3 0.4 0.5 0.6 -50 0 50 100 150 i d = 7.5a i d = 15a v gs = 10v pulsed 0.01 0.1 1 10 0.001 0.1 10 v gs = 10v pulsed t a = 125oc t a = 75oc t a = 25oc t a = ? 25oc fig.15 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds(on) [ @ gate - source voltage : v gs [v] fig.16 static drain - source on - state resistance vs. junction temperature static drain - source on - state resistance : r ds(on) [ @ junction temperature : t j [oc] fig.17 static drain - source on - state resistance vs. drain current static drain - source on - state resistance : r ds(on) [ @ drain current : i d [a] www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
r6015anx 10/13 2012.02 - rev.b ? electrical characteristic curves 0 2 4 6 8 10 12 14 0 200 400 600 t a = 25oc 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 c iss c oss c rss t a = 25oc f = 1mhz v gs = 0v 1 10 100 1000 10000 0.01 0.1 1 10 100 t r t f t d(on) t d(off) t a = 25oc v dd ? 300v v gs = 10v r g = 10 @ pulsed 0 5 10 15 0 10 20 30 40 50 60 70 t a = 25oc v dd ? 300v i d = 15a r g pulsed fig.18 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : v ds [v] fig.19 coss stored energy coss stored energy : e oss [uj] drain - source voltage : v ds [v] fig.20 switching characteristics switching time : t [ns] drain current : i d [a] fig.21 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : q g [nc] www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
r6015anx 11/13 2012.02 - rev.b ? electrical characteristic curves 0.01 0.1 1 10 100 0 0.5 1 1.5 v gs = 0v pulsed t a = 125oc t a = 75oc t a = 25oc t a = ? 25oc fig.22 inverse diode forward current vs. source - drain voltage inverse diode forward current : i s [a] source - drain voltage : v sd [v] fig.23 reverse recovery time vs.inverse diode forward current reverse recovery time : t rr [ns] inverse diode forward current : i s [a] 10 100 1,000 0.1 1 10 100 ta=25 oc di/dt=100a/ s v gs =0v pulsed www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
r6015anx 12/13 2012.02 - rev.b ? measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalanche waveform fig.4-1 dv/dt measurement circuit fig.4-2 dv/dt waveform fig.5-1 di/dt measurement circuit fig.5-2 di/dt waveform www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
r6015anx 13/13 2012.02 - rev.b ? dimensions (unit : mm) dimension in mm/inches d b1 e1 e e b c f a2 a1 a l x a a4 p q a to - 220fm min max min max a 16.60 17.60 0.654 0.693 a1 1.80 2.20 0.071 0.087 a2 14.80 15.40 0.583 0.606 a4 6.80 7.20 0.268 0.283 b 0.70 0.85 0.028 0.033 b1 1.10 1.50 0.043 0.059 c 0.70 0.85 0.028 0.033 d 9.90 10.30 0.39 0.406 e 4.40 4.80 0.173 0.189 e e1 2.70 3.00 0.106 0.118 f 2.80 3.20 0.11 0.126 l 11.50 12.50 0.453 0.492 p 3.00 3.40 0.118 0.134 q 2.10 3.10 0.083 0.122 x - 0.381 - 0.015 2.54 0.10 dim milimeters inches www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
r1120a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement without notice. the content specied herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when design ing circuits for mass production. great care was taken in ensuring the accuracy of the information specied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typical functions of and examples of application circuits for the produc ts. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any product, such as derating, redundancy, re control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.

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